Direct Observations of Retention Failure in Ferroelectric Memories
نویسندگان
چکیده
منابع مشابه
Direct observations of retention failure in ferroelectric memories.
Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswitching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.
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First, I would like to thank my promoter Prof. Rainer Waser for his encouragement and guidance through the three years of my doctorate. He manages to strike the perfect balance between providing direction and encouraging independence. I am especially grateful to him for giving me the opportunity to participate in the FeRAM development program with Agilent Technologies and Texas Instruments and ...
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ژورنال
عنوان ژورنال: Advanced Materials
سال: 2012
ISSN: 0935-9648
DOI: 10.1002/adma.201103983